Light emitting device and method of manufacturing the same

专利摘要:
The inkjet method, which is known as a method for selectively forming a polymer-based organic compound, is advantageous in that three organic compounds emitting three kinds (R, G, B) can be applied at one time. However, the film forming accuracy is poor and difficult to control. Therefore, there is a disadvantage in that uniformity cannot be obtained and deviations are likely to occur. In the present invention, a layer containing a polymeric material is formed on the entire surface of the lower electrode connected to the thin film transistor by a coating method, the upper electrode is formed on the lower electrode, and the plasma is etched using the upper electrode as a mask. Thereby self-aligning the layer containing the polymer compound in a self-aligning manner to enable selective formation of the layer comprising the organic compound. In addition, an electrical connection is achieved by using an adhesive or paste containing conductive particles for connection with the upper electrode. As the layer containing the organic compound, a material emitting white light or a material emitting monochromatic light is used. In addition, full color display is achieved by combining a layer containing an organic compound with a color conversion layer or a colored layer.
公开号:KR20030077430A
申请号:KR10-2003-0018430
申请日:2003-03-25
公开日:2003-10-01
发明作者:야마자키순페이；무라카미마사카즈；세오사토시
申请人:가부시키가이샤 한도오따이 에네루기 켄큐쇼；
IPC主号:

专利说明:

LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME}
[32] The present invention provides a light emitting device using a light emitting element that can obtain fluorescence or phosphorescence by adding an electric field to a device provided with a layer containing an organic compound (hereinafter referred to as "organic compound layer") between a pair of electrodes, and a manufacturing method thereof. It is about. In addition, the light emitting device in this specification refers to an image display device, a light emitting device, or a light source (including a lighting device). The light-emitting device can also be fitted with connectors such as flexible printed circuit (FPC) or Tape Automated Bonding (TAB) tape or Tape Carrier Package (TCP carrier), TAB tape or The module including the printed wiring board at the end of the TCP or the module in which the IC (Integrated Circuit) is directly mounted to the light emitting device by the COG (Chip On Glass) method will be included in the light emitting device.
[33] BACKGROUND ART Light emitting devices using organic compounds having thin, light weight, high-speed response, direct current, low voltage driving, and the like as light emitters are expected to be applied to next-generation flat panel device play. In particular, it is known that a display device in which light emitting elements are arranged in a matrix has an advantage in that the viewing angle is wider and the visibility is superior to that of a conventional liquid crystal display device.
[34] In the light emitting device of the light emitting device, electrons injected from the cathode and holes injected from the anode recombine at the emission center in the organic compound layer by applying a voltage between a pair of electrodes interposed between the organic compound layers to form molecular excitons. It is said to emit energy by emitting energy when returning to the low state. Singlet excitation and triplet excitation are known as an excited state, and light emission is considered to be possible through any of the excited states.
[35] As the light emitting device formed by arranging such light emitting elements in a matrix, it is possible to use a driving method such as passive matrix driving (simple matrix type) and active matrix driving (active matrix type). However, when the pixel density is increased, it is known to be advantageous because the active matrix type in which the switch is provided for each pixel (or one dot) can be driven at low voltage.
[36] In addition, low molecular materials and high molecular weight (polymer) materials have been studied for the organic compounds that are also referred to as the center of the light emitting device (strictly the light emitting layer). The polymers are easier to handle and have higher heat resistance than the low molecular materials. System materials are attracting attention.
[37] In addition, a deposition method, a spin coating method, an inkjet method, and the like are known for forming organic compounds and the like. As a method for realizing full colorization using a polymer material, spin coating and inkjet methods are particularly preferred. .
[38] However, in the case of using the spin coating method, since the organic compound is formed on the entire surface of the film formation, it is difficult to selectively form the film such as forming the organic compound only on the portion to be formed and not forming the film on the unnecessary portion.
[39] In the case of the active matrix type light emitting device, a light emitting element and an external device comprising a wiring for inputting an electrical signal from an external power source to a driving circuit formed on a substrate, or an organic compound layer formed of a cathode, an anode, and an organic compound formed in the pixel portion. Since the wirings for electrically connecting the power supply are formed, if an organic compound is formed in the connecting portion (terminal portion) of the wirings with the external power supply, a problem arises in that ohmic contact with the external power supply cannot be obtained. In particular, when the organic compound layer is formed using the spin coating method, it is difficult to pull out the electrode (cathode or anode) provided on the organic compound layer to the terminal portion.
[40] Accordingly, the present invention provides a method for selectively forming a polymer-based organic compound layer and also provides a connection structure for electrically connecting an electrode (cathode or anode) provided on the organic compound layer to a wiring extending from the terminal portion.
[41] In addition, the inkjet method, which is known as a method of selectively depositing high molecular organic compounds, can apply three types of organic compounds that emit light (R, G, B) at one time. It is not possible to obtain a step, which is likely to occur. Examples of the step difference of the inkjet method include nozzle pitch deviation, ink flight warpage variation, stage matching accuracy, and timing deviation of ink discharge and stage movement. For example, problems in practical conditions, such as clogging the inkjet nozzles due to internal viscosity resistance of an ink prepared by dissolving an organic compound in a solvent, or the ink ejected from the nozzles, do not reach a desired position, or a high precision stage. A dedicated device having an automatic alignment mechanism, an ink head, and the like is required, which has problems in practical use such as an increase in cost. In addition, since the ink spreads after reaching, a certain margin is required as an interval between adjacent pixels, making high definition difficult.
[42] Accordingly, the present invention provides a simple method for selectively forming a polymer material layer in the active matrix type light emitting device using a polymer organic compound, and induces organic in the connection portion of the wiring connected to an external power source. It is another object to simply form a structure in which no compound layer is formed.
[43] In the light emitting device, in the pixel not emitting light, the incident external light (light outside the light emitting device) is reflected on the back surface of the cathode (the surface in contact with the light emitting layer), and the back surface of the cathode acts like a mirror so that the external background There were problems such as reflection on the observation surface (the surface facing the observer's side). In addition, in order to avoid this problem, attempts have been made to attach the circular polarizing film to the observation surface of the light emitting device so that the external background of the deposition surface is not reflected. However, since the circular polarizing film is quite expensive, the manufacturing cost increases. there was.
[44] According to the present invention, a film made of a polymeric material is formed on the lower electrode (first electrode) by an application method and then an upper electrode (second electrode) is formed using a deposition mask by a deposition method, and the upper electrode is used as a mask. Plasma etching etches a film of polymeric material self-aligned to enable selective formation of the polymeric material layer.
[45] In addition, an auxiliary electrode (third electrode) is formed to contact the upper electrode with the wiring extending to the terminal electrode. Moreover, as long as the film thickness can withstand the etching process by plasma, the upper electrode can be made thin and the resistance can be reduced by the auxiliary electrode formed thereon. As this auxiliary electrode, metal wiring made of a metal material is also possible, and an adhesive containing conductive paste (nano paste, hybrid paste, nanometal ink, etc.) or conductive fine particles is also possible.
[46] As the configuration of the invention disclosed in this specification shows an example thereof in Fig. 1 (A) and Fig. 1 (B) or Fig. 22 (A) and Fig. 22 (B),
[47] Between a first substrate having an insulating surface and a second substrate having a light transmitting property, a first electrode, a layer containing an organic compound in contact with the first electrode, and a second electrode in contact with the layer containing the organic compound are provided. As a light emitting device having a pixel portion having a plurality of light emitting elements, a driving circuit, and a terminal portion,
[48] The terminal portion is disposed on the first substrate so as to be located outside the second substrate, and the first substrate and the second substrate are attached by an adhesive in which a plurality of kinds of conductive fine particles having different particle diameters are attached, and the second electrode is attached. And a wiring from the terminal portion are electrically connected to each other.
[49] In addition, another configuration of the invention as shown in Figure 1 (A) and 1 (B) as an example,
[50] Between a first substrate having an insulating surface and a second substrate having a light transmitting property, a first electrode, a layer containing an organic compound in contact with the first electrode, and a second electrode in contact with the layer containing the organic compound are provided. As a light emitting device having a pixel portion having a plurality of light emitting elements, a driving circuit, and a terminal portion,
[51] The terminal portion is disposed on the first substrate so as to be positioned outside the second substrate, and the first substrate and the second substrate are formed by an adhesive in which fine particles made of an inorganic material and conductive fine particles having a larger particle size than the fine particles are mixed. And a wiring from the second electrode and the terminal portion is electrically connected.
[52] In addition, another configuration of the invention is shown in Figure 2 (A) and 2 (B) or 3 (A) and 3 (B) as an example,
[53] A light emitting device having a pixel portion having a plurality of light emitting elements having a first electrode, a layer comprising an organic compound in contact with the first electrode, and a second electrode in contact with the layer containing the organic compound, and a terminal portion. ,
[54] The cross section of the layer containing the organic compound and the cross section of the second electrode coincide with each other, and the second electrode and the wiring extending from the terminal portion include the conductive particles between the terminal portion and the pixel portion. There is a light emitting device characterized in that there is a portion electrically connected by.
[55] In addition, as another configuration of the invention shown in Figure 5 (A) and 5 (B) as an example,
[56] A light emitting device having a pixel portion having a plurality of light emitting elements each having a first electrode, a layer containing an organic compound in contact with the first electrode, and a second electrode in contact with the layer containing the organic compound, and a terminal part. ,
[57] A cross section of the layer including the organic compound and a cross section of the second electrode coincide with each other, and the second electrode and a wire extending from the terminal portion cover the second electrode between the terminal portion and the pixel portion. A light emitting device characterized in that there is a portion connected by an electrode.
[58] The said 3rd electrode is a metal material in the said structure, It is characterized by the above-mentioned. In the above configuration, the second electrode and the third electrode are a cathode or an anode of the light emitting element.
[59] Moreover, in each said structure, the said 2nd electrode has the same pattern shape as the layer containing the said organic compound, It is characterized by the above-mentioned.
[60] Moreover, in the said structure, the layer containing the said organic compound is characterized by being a polymeric material. Or in each said structure, the layer containing the said organic compound is characterized by lamination | stacking of the layer which consists of a polymeric material material, and the layer which consists of a low molecular weight material.
[61] In each of the above configurations, an end of the first electrode is covered with an insulating film, an upper end portion of the insulating layer has a curved surface having a first radius of curvature, and a lower end portion of the insulating layer has a curved surface having a second radius of curvature, The first radius of curvature and the second radius of curvature are 0.2 µm to 3 µm.
[62] In each of the above structures, the first electrode is a light-transmitting material and is an anode or a cathode of the light emitting element.
[63] In each of the above structures, the layer containing the organic compound is a material emitting white light, and is combined with a color filter, or the layer containing the organic compound is a material emitting monochromatic color, and is a color conversion layer or coloring. It is characterized by combining with layers.
[64] In addition, the configuration of the invention for realizing the above structure, as shown in Figure 4 (A) to 4 (C) as an example,
[65] A manufacturing method of a light emitting device having a light emitting element having an anode, a layer containing an organic compound in contact with the anode, and a cathode in contact with the layer containing the organic compound,
[66] Forming a film containing an organic compound made of a polymeric material by a coating method on a light-transmitting first electrode,
[67] Selectively forming a second electrode made of a metal material by a deposition method of heating the deposition material on the film containing the organic compound;
[68] Self-aligningly etching the layer containing the organic compound by etching with plasma using the second electrode as a mask;
[69] And a step of selectively forming a third electrode made of a metal material covering the second electrode.
[70] In the configuration according to the manufacturing method, the second electrode and the third electrode are a cathode or an anode. In the configuration according to the manufacturing method, the third electrode may be formed by a vapor deposition method or a sputtering method.
[71] In addition, another configuration of the invention related to the manufacturing method,
[72] A method of manufacturing a light emitting device comprising a light emitting device having an anode, a layer containing an organic compound in contact with the anode, and a cathode in contact with the layer containing the organic compound,
[73] Forming a film containing an organic compound made of a polymeric material by a coating method on a light-transmitting first electrode,
[74] Selectively forming a second electrode made of a metal material by a deposition method of heating a deposition material on a film containing the organic compound,
[75] Self-aligningly etching a film containing the organic compound by etching with plasma using the second electrode as a mask;
[76] It has a process of connecting the said 2nd electrode and the wiring extended from a terminal part with the adhesive agent containing electroconductive particle, The manufacturing method of the light-emitting device characterized by the above-mentioned.
[77] In addition, another configuration of the invention related to the manufacturing method,
[78] A method of manufacturing a light emitting device having a light emitting element having an anode, a layer containing an organic compound in contact with the anode, and a cathode in contact with the layer containing the organic compound,
[79] Forming a thin film transistor on the first substrate,
[80] Forming a first electrode connected to the thin film transistor;
[81] Forming a film containing an organic compound made of a polymeric material on the first electrode by coating;
[82] Selectively forming a second electrode made of a metal material by a deposition method of heating a deposition material on a film containing the organic compound;
[83] Self-aligningly etching the layer containing the organic compound by etching with plasma using the second electrode as a mask;
[84] A method of manufacturing a light emitting device comprising the step of connecting the second electrode and the wiring extending from the terminal portion with an adhesive containing conductive particles and adhering the first substrate and the second substrate.
[85] In each of the above configurations according to the manufacturing method, the plasma is characterized by generating one or more kinds of gases selected from Ar, H, F or O by excitation.
[86] In each of the above structures related to the manufacturing method, the first electrode is an anode or a cathode of the light emitting element electrically connected to the TFT.
[87] In addition, the light emitting element (EL element) has a layer (hereinafter referred to as EL layer) containing an organic compound capable of obtaining luminescence (ElectroLuminescence) generated by applying an electric field, an anode, and a cathode. The luminescence of organic compounds includes light emission (fluorescence) when returning from the singlet excited state to the ground state and light (phosphorescence) when returning from the triplet excited state to the ground state. Is applicable in the case of using any light emission.
[88] In the light emitting device of the present invention, the method of driving the screen display is not particularly limited. For example, a point sequential driving method, a line sequential driving method, a surface sequential driving method, or the like may be used. Typically, a linear sequential driving method may be used, and a time division gray scale driving method or an area gray scale driving method may be appropriately used. The video signal input to the source line of the light emitting device can be either an analog signal or a digital signal, so that a drive circuit or the like can be appropriately designed in accordance with the video signal.
[89] In addition, the conductive paste can be formed by various coating methods (screw printing method, spin coating method, dip coating method, etc.), and nanometal ink can be formed by inkjet method.
[1] 1 (A) and 1 (B) are a top view and a cross-sectional view of the first embodiment, respectively,
[2] 2 (A) and 2 (B) are a top view and a cross-sectional view of the second embodiment, respectively,
[3] 3 (A) and 3 (B) are a top view and a sectional view of the third embodiment, respectively,
[4] 4 (A) to 4 (C) are cross-sectional views showing the etching process of the fourth embodiment.
[5] 5 (A) and 5 (B) are a top view and a sectional view of the fourth embodiment, respectively,
[6] 6 (A) and 6 (B) are top and cross-sectional views showing the pixels of Example 1, respectively;
[7] 7 (A) to 7 (C) show a manufacturing process of Example 1,
[8] 8A and 8B are sectional views showing the active display device of Example 1, respectively;
[9] 9 (A) to 9 (C) each illustrate a lamination structure for the light emitting device of Example 1;
[10] 10 (A) to FIG. 10 (C) are schematic views when full color display is performed using white light emission in Example 1;
[11] 11 (A) to 11 (D) are schematic views in the case of performing full color display by using a stack of a high molecular material and a low molecular material in Example 1;
[12] 12 is a view showing the manufacturing apparatus of Example 2;
[13] 13A to 13F are views each showing an example of the electronic apparatus of the third embodiment,
[14] 14A to 14C each show an example of the electronic device of the third embodiment,
[15] 15 is a view showing the transmittance of each colored layer of Example 1,
[16] 16 is a graph showing chromaticity coordinates of Example 1;
[17] 17 is a photograph showing a cross section around an insulating film of Embodiment 4;
[18] 18 is a photograph showing a cross section around an insulating film of a comparative example;
[19] 19 (A) to 19 (C) are cross-sectional views of Example 4,
[20] 20 is a photograph showing a cross section around an insulating film;
[21] 21 (A) to 21 (C) are a sectional view and a top view of Embodiment 4,
[22] 22 (A) and 22 (B) are cross-sectional views of Embodiment 1. FIG.
[23] *** Explanation of symbols for the main parts of the drawing ***
[24] 10: organic compound layer
[25] 11: second electrode
[26] 12: pixel portion
[27] 17: connection wiring
[28] 19: first electrode
[29] 20: encapsulant
[30] 22: adhesive
[31] 23: light emitting element
[90] Hereinafter, embodiments of the present invention will be described.
[91] (Embodiment 1)
[92] A top view of the active matrix light emitting device is shown in Fig. 1A. Moreover, sectional drawing along the dotted line X-X 'shown to FIG. 1 (A) is shown to FIG. 1 (B). Here, the light emitting element 23 having a laminated structure made of a polymer material emitting white light will be described as an example.
[93] 1A and 1B, a plurality of pixel portions 12 and drive circuits (gate side drive circuits 14 and 15 and source side drive circuits 13) provided on a substrate having an insulating surface are provided in plural. Has a TFT (not shown). The TFT provided in the pixel portion 12 is an element for controlling the current flowing in the EL layer 10 to emit light, and the first electrode 19 and the power supply line 16 are connected.
[94] In the pixel portion 12, a plurality of light emitting elements 23 made of the first electrode 19, the second electrode 11, and the organic compound layer 10 interposed between the electrode yarns are disposed, and each light emitting element) The first electrode 19 connected to 23_ is regularly arranged. The first electrode 19 is an anode (or cathode) of the organic light emitting element, and the second electrode 11 is a cathode (or anode) of the organic light emitting element. When a translucent conductive material is used as the second electrode 11 and a metal material is used as the first electrode 19, light from the light emitting element 23 can be passed through the encapsulant. On the other hand, when a translucent conductive material is used as the first electrode 19 and a metal material is used as the second electrode, light can be obtained in the reverse direction. In the configuration of FIGS. 1A and 2B, light can be extracted in any direction, but when the light from the light emitting element 23 is passed through the encapsulant, the encapsulant 20 and an adhesive having a conductivity (( 22) must be translucent in nature.
[95] The organic compound layer 10 has a laminated structure. Representatively, a laminated structure such as a hole transport layer / light emitting layer / electron transport layer formed on the anode can be given. This structure has a considerably high luminous efficiency, and almost all of the light emitting devices currently being researched and developed have adopted this structure. In addition, a structure in which a hole injection layer / hole transport layer / light emitting layer / electron transport layer or a hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer is laminated in this order is also possible. In addition, a fluorescent dye or the like may be doped into the light emitting layer. In addition, all of these layers can be formed using low molecular materials and can be formed using all polymeric materials. In addition, in this specification, all layers provided between the cathode and the anode are collectively referred to as a layer (EL layer) including an organic compound layer. Therefore, the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer and the electron injection layer are all included in the EL layer. In addition, the layer (EL layer) containing the organic compound may also include an inorganic material such as silicon.
[96] In addition, both ends of the first electrode 19 and the gap therebetween are covered with an organic insulating film 18 (also called a barrier or bank). The organic insulating film 18 may also be covered with an inorganic insulating film.
[97] In addition, a terminal electrode is formed in the terminal portion and has a connection wiring 17 extending from the terminal electrode. This connection wiring 17 is electrically connected with the 2nd electrode 11 by the adhesive agent 22 which has electroconductivity. In addition, since the organic compound layer is etched self-aligning using the second electrode 11 as a mask, the cross-sections of the second electrode 11 and the organic compound layer 10 coincide with each other, and the adhesive 22 having conductivity is in contact with the cross-section. Is provided. The electroconductive adhesive agent 22 contains electroconductive fine particles 22b, such as silver particle | grains and copper particle | grains, and the spacer 22a, and the sealing material 20 is affixed and the light emitting element 23 is sealed. As the adhesive 22 having conductivity, a thermosetting resin may be used or an ultraviolet curable resin may be used. However, in the case of using the thermosetting resin as the adhesive 22 having conductivity, it is necessary to appropriately select a material having a firing temperature in the range where the organic compound layer 10 does not deteriorate, and in the case of using the ultraviolet curable resin, it is permeable as a sealing material. It is necessary to use a material having
[98] The spacer 22a may be either an inorganic insulating material or an organic insulating material, and a plurality of types having different particle diameters may be used. When the spacer 22a is used as an inorganic insulating material coated with a low-resistance metal film such as gold (for example, conductive fine particles uniformly plated with gold on a surface of plastic fine particles having a uniform particle size), the spacer is conductive fine particles. Can be called
[99] 1B shows an example in which the particle diameter of the conductive fine particles 22b is larger than the particle diameter of the spacer 22a. Surface contact can also be made by making the particle | grains of a big particle diameter into the organic material which has the elasticity which coated the metal film on the surface, and deforming the thing of the big particle diameter at the time of crimping the sealing material 20 using the particle | grains of small particle diameter as an inorganic material. 22A and 22B show an example in which the particle diameter of the conductive fine particles 1022b is smaller than the particle size of the spacer 1022a. 22 (A) and 22 (B), the electrically conductive fine particles 1022b are present at the connection portions of the second electrode 11 and the connection wiring 17 so that the electrical connection can be performed. It is not necessary to uniformly distribute the conductive fine particles 1022b in 1022, but may be concentrated near the second electrode 11 or the connection wiring 17 by gravity.
[100] In addition, when the conductive adhesive 22 is used, the encapsulant 20 may be attached to encapsulate the light emitting device 23, and electrical connection between the connection wiring 17 and the second electrode 11 may be simultaneously performed. Throughput can be improved.
[101] 1A and 1B show an example in which an electrically conductive adhesive 22 is formed covering the entire surface of the pixel portion, but is not particularly limited thereto, and may be partially formed. Moreover, the adhesive agent 22 can also be made into the laminated structure of the material layer containing electroconductive fine particles, such as silver paste and copper paste, and the adhesive agent containing a spacer and a filler. In the case where the adhesive 22 has a laminated structure, an electrical connection between the connection wiring 17 and the second electrode 11 is first performed by forming a material layer containing conductive fine particles, and then an adhesive including a spacer or a filler is used. The encapsulant 20 is connected to encapsulate the light emitting element 23.
[102] In addition, the encapsulant 20 is attached by a spacer or a filler to maintain an interval of about 2 to 30 μm, and all light emitting devices are sealed. Although not shown here, the encapsulation member 20 is formed with a sandblasting method or the like in the encapsulant 20, and a desiccant is disposed in the concave portion. In addition, it is preferable to perform degassing by performing annealing in vacuum immediately before attaching the encapsulant 20. In addition, the attachment of the encapsulant 20 is preferably performed in an atmosphere containing an inert gas (rare gas or nitrogen).
[103] In addition, when the electrical resistivity of the conductive adhesive is relatively high, the electrode may be formed on the encapsulant 20 in advance and electrically connected to the conductive adhesive 22 when the adhesive is attached to reduce the resistance. In this case, it is preferable to use an inorganic insulating material coated with a low-resistance metal film such as gold as the spacer 22a. The gap between the encapsulant 20 and the second electrode 11 is maintained at the particle size of the spacer 22a. Electrical connection between the second electrode 11 and the electrode on the encapsulant 20 and electrical connection of the connection wiring 17 and the electrode long on the encapsulant 20 may be performed. In the case of using plural kinds of particles having different particle diameters, a large particle size is used as an organic material having elasticity and a small particle size is used as an inorganic material to deform the large particle size when compressing the encapsulant 20. It is also possible to make surface contact with the electrode on ().
[104] (Embodiment 2)
[105] Here, the structural example different from FIG. 1 (A) and FIG. 1 (B) which forms the electrically conductive adhesive in large area is shown to FIG. 2 (A) and FIG. 2 (B). In addition, for simplicity, the same part as FIG. 1 (A) and FIG. 1 (B) in FIG. 2 (A) and FIG. 2 (B) uses the same thing. In FIGS. 2A and 2B, the second electrode 11 has the same configuration as that of FIGS. 1A and 1B, and thus detailed description thereof is omitted here.
[106] In this embodiment, an example in which the conductive material 32 is partially formed and the seal material 31 is separately formed is shown. Electrical connection between the connection wiring 17 and the second electrode 11 is performed by the conductive material 32. In addition, since the organic compound layer is etched self-aligning with the second electrode 11 as a mask, the cross section of the second electrode 11 and the organic compound layer 10 coincide with each other, and the conductive material 32 is provided in contact with the cross section. .
[107] 2 (A) and 2 (B), the conductive material 32 is a conductive paste, a conductive ink, or a nanometal ink represented by silver paste or copper paste (Ag, Au having a particle diameter of 5 to 10 nm). Or a self-dispersing ultrafine dispersion solution in which Pd is dispersed at high density without lumping. For example, a conductive material containing silver-plated copper powder, a phenol resin, dimethylene glycol monomethyl ether, and the like as a main component and having a specific resistance of less than 5 x 10 < -4 > Cm and an adhesive strength of 0.8 kg / mm < 2 > Can be used as Alternatively, it is also possible to use a quick-drying silver conductive agent (modified polyolefin resin containing planar silver powder having a particle size of 0.5 to 1 탆) as the conductive material 32.
[108] When a solvent is used as the conductive material 32, steam is generated by heat, which may cause contamination of the organic compound layer. The present invention provides a sealing material 31 between the conductive material 32 and the pixel portion 12. By doing so, contamination of the organic compound layer 10 is prevented. Therefore, it is preferable to form the sealing material 31 and to attach the sealing material 20 to form the conductive material 32. In addition, the formation order of the sealing material 31 and the electrically conductive material 32 is not specifically limited, After forming the electrically conductive material 32, you may form the sealing material 31, and may adhere to the sealing material 20. FIG.
[109] A filler is mixed in the seal 31, and the filler 20 is attached to the seal 31 at a uniform interval. It is also possible to incorporate the spacer with the filler. As shown in FIG. 2A, the seal member 31 may be formed to partially overlap the gate driving circuit portions 14 and 15.
[110] In addition, extraction of light from the light emitting element 23 can be performed in any direction in the configuration of FIGS. 2A and 2B. In addition, when the light from the light emitting device 23 is passed through the encapsulant and drawn out, the encapsulant 20 must have a light transmissivity.
[111] In addition, the present embodiment can be freely combined with the first embodiment.
[112] (Embodiment 3)
[113] Here, the structural example different from FIG. 1 (A), FIG. 1 (B), FIG. 2 (A), and FIG. 2 (B) which attaches a bar material is shown to FIG. 3 (A) and FIG. 3 (B). Also, for the sake of simplicity, the same parts as in Figs. 1A and 1B in Figs. 3A and 3B use the same parts. 3A and 3B to the second electrode 11 are the same as those in FIGS. 1A and 1B, and thus detailed descriptions thereof will be omitted.
[114] In this embodiment, an example is shown in which the conductive material 42 is partially formed and sealed with a protective film. The electrically conductive material 42 conducts electrical contact between the connecting wiring 17 and the second electrode 11. In addition, since the organic compound layer is etched in a self-aligned manner with the second electrode 11 as a mask, the cross section of the second electrode 11 and the organic compound layer 10 coincide with each other, and the conductive material 42 is provided in contact with the cross section. .
[115] Like the conductive material 32 shown in the second embodiment, as the conductive material 42 in FIGS. 3A and 3B, a conductive paste or a conductive ink represented by silver paste or copper paste is used. Alternatively, it is also possible to use a nanometal ink (an independent dispersion type ultrafine dispersion solution in which Ag, Au or Pd having a particle diameter of 5 to 10 nm is dispersed at high density without clumping) as the conductive material 42. This nanometal ink is baked at 220 to 250 ° C.
[116] After the conductive material 42 is formed, the protective film 41 is formed. As the protective film 41, an insulating film containing silicon nitride or silicon oxynitride obtained by the sputtering method (DC method or RF method) as the main component, or a thin film mainly containing carbon obtained by the PCVD method is used. When a film is formed in an atmosphere containing nitrogen and argon using a silicon target, a silicon nitride film is obtained. Silicon nitride targets may also be used. The protective film 41 may also be formed using a film forming apparatus using a remote plasma. In addition, in the case where light is passed through the protective film, the film thickness of the protective film is preferably as thin as possible.
[117] In the present invention, the thin film containing carbon as a main component is a DLC (Diamond Like Carbon) film having a film thickness of 3 to 50 nm. The DLC film has a SP ³ bond as a bond between carbons in a short distance order, but has a macroscopic structure. The composition of the DLC film is 70 to 95 atomic% of carbon and 5 to 30 atomic% of hydrogen, which is extremely hard and has excellent insulation. Such DLC membranes are also characterized by low gas permeability such as water vapor and oxygen. It is also known to have a hardness of 15 to 25 GPa as measured by a microhardness meter.
[118] The DLC film can be formed by a plasma CVD method (typically, an RF plasma CVD method, a microwave CVD method, an electron cyclotron resonance (ECR) CVD method, or the like), a sputtering method, or the like. Either film forming method can be used to form a highly adherent DLC film. The DLC film is formed by placing a substrate on a cathode. In addition, by applying a negative bias to utilize the ion bombardment to some extent, a rigid film can be formed precisely.
[119] The reaction gas used for the film formation is ionized by glow discharge using hydrogen gas and hydrocarbon gas (for example, CH ₄ , C ₂ H ₂ , C ₆ H _6, etc.) and ions are applied to the cathode subjected to negative self bias. The film is formed by accelerated impact. In this way, a dense and smooth DLC film can be obtained. This DLC film is an insulating film that is transparent or translucent to visible light. In the present specification, transparent to visible light means that transmittance of visible light is 80 to 100%, and translucent to visible light means that transmittance of visible light is 50 to 80%.
[120] In addition, when a silicon nitride film is formed on a film made of a transparent conductive film by the sputtering method, impurities (In, Sn, Zn, etc.) included in the transparent conductive film may be mixed in the silicon nitride film. It is also possible to prevent the incorporation of impurities into the silicon nitride film by forming between the silicon nitride film and the silicon nitride film. By forming the buffer layer by the above structure, the incorporation of impurities from the transparent conductive film can be prevented and an excellent protective film free of impurities can be formed.
[121] In addition, after the protective film is formed, it is also possible to form a sealing material and attach it to the sealing material in order to further increase the sealing property.
[122] In addition, this embodiment can be combined freely with Embodiment 1 or Embodiment 2.
[123] (Embodiment 4)
[124] Here, the formation process of the light emitting device will be briefly described with reference to FIGS. 4A, 4B, and 4C. In addition, for simplicity, the same part as FIG. 1 (A) and FIG. 1 (B) in FIG. 4 (A), FIG. 4 (B), and FIG. 4 (C) uses the same thing.
[125] First, a TFT (not shown here), a first electrode 19, a connection wiring 17, and an insulating film 18 are formed on the substrate, and then the organic compound layer 10 is formed by a coating method using a spin coat, followed by vacuum. It bakes by heating (FIG. 4 (A)). In the case where the organic compound layer 10 has a laminated structure, film formation and firing may be repeated.
[126] Subsequently, the deposition mask 50 is used to form a second electrode 11 made of a metal material selectively by the deposition method (Fig. 4 (B)). In FIG. 4B, the deposition is performed in a state where the gap between the metal mask and the organic compound layer is extended, but may be performed in the contacted state.
[127] Subsequently, the organic compound layer 10 is etched self-aligning with the second electrode 11 as a mask. Here, etching is selectively performed using a plasma generated by exciting one or more kinds of gases selected from the group consisting of Ar, H, F or O (Fig. 4 (C)). However, it is important that the second electrode 11 appropriately select a material or a film thickness that withstands the plasma. By enabling the selective formation of the polymer material layer by the present invention, it is possible to easily form a structure in which the organic compound layer is not formed in the connection portion of the wiring connected to the external power source.
[128] The state shown in FIG. 4C is obtained by the process so far, but in this state, the second electrode 11 is not connected anywhere but is floating. Therefore, it connects electrically with the connection wiring 17 in a later process. As a method of electrically connecting the second electrode 11 to the connection wiring 17, an adhesive 22 having conductivity shown in the first embodiment may be used, and the conductive material shown in the second and third embodiments. (32, 42) can also be used.
[129] In the fourth embodiment, a third electrode 51 made of a low resistance metal material is formed as a method of electrically connecting the second electrode 11 to the connection wiring 17 (Fig. 5 (B)). In addition, the top view of the structure manufactured by the process to here is shown to FIG. 5 (A).
[130] As the 3rd electrode 51, what is necessary is just to form suitably by a sputtering method, a vapor deposition method, or a PCVD method, and it is preferable to use the metal material with low electrical resistivity compared with the material of the 2nd electrode 11. As shown in FIG. For example, an element selected from the group consisting of poly-Si, W, WSi _x , Al, Ti, Mo, Cu, Ta, Cr and Mo doped with an impurity element imparting a conductivity type as the third electrode 51 or An alloy material or a compound material containing the above element as a main component, or a laminated film thereof. As the third electrode 51, an electrode made of a laminate (specifically, a laminate of TiN, Al, and TiN) having a nitride layer or a fluoride layer as the uppermost layer is used. Therefore, the light from the light emitting element passes through the first electrode 19 and is extracted.
[131] In addition, it is preferable to use the same material as the second electrode 11 as the third electrode 51, and in that case, it is preferable to reduce the thickness by making the film thickness thicker than that of the second electrode 11. Moreover, when the same material as the 2nd electrode 11 is used as the 3rd electrode 51, the film thickness of the 2nd electrode 11 can also be made thinner.
[132] The process after the formation of the third electrode 51 may be performed by forming a protective film or attaching an encapsulant to encapsulate the light emitting device.
[133] In addition, since the cross-sectional shape of the insulating film 18 which consists of organic materials shown in FIG. 5B is important, it demonstrates below. In the case of forming the organic compound film on the insulating film 18 by the coating method or in the case of forming the metal film to be the cathode by the vapor deposition method, the insulating film 18 may be formed as shown in FIG. 18 without the curved surface at the lower end or the upper end of the insulating film 18. Film formation failure in which the protrusion is formed at the upper end of 18) occurs. Accordingly, the present invention has a curved surface having a first radius of curvature at the upper end of the insulating film 18 and a curved surface having a second radius of curvature at the lower end of the insulating film 18, as shown in FIGS. 17 and 5B. It is made in shape. Moreover, it is preferable that both a 1st curvature radius and a 2nd curvature radius are 0.2 micrometer-3 micrometers. According to the present invention, coverage of an organic compound film or a metal film can be improved, and a defect called a shrink which reduces the light emitting area can be reduced. In addition, shrinkage can be reduced by forming a silicon nitride film or a silicon nitride oxide film on the insulating film 18. In addition, the taper angle at the side surface of the insulating film 18 may be 45 ° ± 10 °.
[134] As the insulating film 18, an inorganic material (silicon oxide, silicon nitride, silicon oxynitride, etc.), a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimideamide, resist or benzocyclobutene) or a stack thereof 17 and 5 (B), the curved surface having the second radius of curvature at the upper end of the insulating film 18 and the curved surface having the second radius of curvature at the lower end of the insulating film 18 can be used. When it is going to have a shape which it has, it can form easily using the photosensitive organic material. As the insulating film 18, either a photosensitive negative type that is insoluble in an etchant by light or a photosensitive positive type that is soluble in an etchant by light can be used.
[135] 21A to 21C, a protective film 70 made of a silicon nitride film is formed on the insulating film 68, and an example in which the pattern of the insulating film is different from the silicon nitride film pattern is shown. 21 (A) to 21 (C), the top view at the stage of forming the layer 60 containing the organic compound for the sake of simplicity is shown in FIG. 21 (A) and the solid line of FIG. 21 (A). A cross-sectional view cut along A-A 'is shown in Fig. 21B, and a cross-sectional view cut along the solid line B-B' in Fig. 21A is shown in Fig. 21C. In the cross-sectional view shown in FIG. 21B, the insulating film 68 does not exist between the adjacent first electrodes 69. In Fig. 21A, the pattern of the insulating film 68 is stripe-shaped, and the pattern of the silicon nitride film, which is the protective film 70, is a lattice shape covering only the end of the first electrode 69 as a dotted line. By forming the insulating film 68 in a stripe shape, it is possible to easily remove particles and impurities when the surface of the first electrode 69 is wet-cleaned (cleaned) as compared with the case of lattice shape. 21A to 21C, regions of the pixel portion 62 which are not covered with the protective film 70 become light emitting regions.
[136] As the protective film 70, a silicon oxynitride film or a film represented by AlN _X O _Y may be used instead of the silicon nitride film. The film represented by AlN _X O _Y may be formed by introducing oxygen, nitrogen or a rare gas from the gas introduction system by a sputtering method using a target made of AlN or Al. In the layer represented by AlN _X O _Y , nitrogen may be in the range containing several atomic% or more, preferably 2.5 atomic% to 47.5 atomic%, and oxygen may be 47.5 atomic% or less, preferably 0.01 to 20 atomic% or less.
[137] By forming the protective film 70 on the insulating film 68, the film thickness uniformity of the layer 60 including the organic compound is improved, and heat generation due to electric field concentration generated during light emission can be suppressed, and the light emitting area is reduced. Deterioration of the light emitting element represented by the shrink can be prevented.
[138] In addition, the present embodiment can be freely combined with any one of the first to third embodiments.
[139] The present invention having the above configuration will be described in more detail with reference to the following examples.
[140] (Example)
[141] Example 1
[142] In this embodiment, a structure in which light generated from an EL element is transmitted to the element substrate and reflected to the observer's eye is shown below. In this case, the observer can also recognize the image from the element substrate side.
[143] First, a pixel structure in which three TFTs are arranged in one pixel will be described. An example of the detailed top view of the pixel is shown in Fig. 6A.
[144] A second gate signal line 603 having an erasing transistor 606 in the case of performing SES driving in the configuration shown in FIG. 6A and inputting a gate electrode and an erasing signal of the erasing transistor 606. The source electrode and the current supply line 604 are connected, and the drain electrode and the gate electrode of the drain electrode and driving TFT 607 of the switching TFT 605 are connected.
[145] In the case of the three-transistor type, two TFTs of the switching TFT 605 and the erasing TFT 606 are arranged in a horizontal line between the first gate signal line 602 and the second gate signal line 603. The drain region of the switching TFT 605 and the drain region of the erasing TFT 606 may overlap. At this time, any one point of the source region of the switching TFT 605, any one point of the drain region, and any one point of the source region of the erasing TFT 606, and any one point of the drain region are arranged on one straight line.
[146] By arranging as mentioned above, an opening ratio can be raised and an opening can also be made simple.
[147] 6B is a cross-sectional view of the line α-α 'in FIG. 6 (A). Like the driving TFT 607, the semiconductor layer 614 can be formed to be serpentine in the longitudinal direction. By forming the semiconductor layer 614 in such a shape, the channel length of the driving TFT 607 can be reduced without lowering the aperture ratio. (L) can be made longer. In addition, in order to reduce the off current value, the driving TFT 607 may be a TFT having a plurality of channels. In addition, it is preferable that the channel length L of the driving TFT 607 is 100 µm or more. When the channel length L is made longer, the oxide film capacity C _ox increases, so that a part of the capacity can be used as the holding capacity of the organic light emitting element. Conventionally, a space for forming a storage capacitor is required to form the storage capacitor for each pixel, and capacitance lines, capacitor electrodes, and the like have been provided. However, by taking the pixel configuration of the present invention, the capacitor lines and the capacitor electrodes can be omitted. In the case where the storage capacitor is formed by the oxide film capacitor C _ox , the storage capacitor is formed by the gate electrode using the gate insulating film as a derivative and a semiconductor (channel forming region) overlapping the gate electrode via the gate insulating film. Therefore, even if the channel length of the TFT is increased, the semiconductor layer of the driving TFT 607 connected to the pixel electrode 608 is disposed below the current supply line 604 or the source signal line 601 disposed above the gate electrode. The pixel can be designed without lowering the aperture ratio. In particular, by setting the pixel configuration shown in Figs. 6A and 6B, even if the space for forming the capacitor electrode or the capacitor wiring is omitted, a sufficient holding capacitance can be provided and the aperture ratio can be increased. In addition, when the channel length L is lengthened, even if variations in the TFT manufacturing process such as laser light irradiation conditions occur, variations in electrical characteristics between the respective TFTs can be reduced.
[148] 8 (A) and 8 (B), the external view of the active matrix light emitting device will be described. FIG. 8 (A) is a top view of the light emitting device, and FIG. A is a cross-sectional view taken along the line A-A 'The active matrix light emitting device includes a source signal line driver circuit 901, a pixel portion 902, and a gate signal line driver circuit 903 shown in dashed lines. Is a sealing substrate, 905 is a sealant, and an inner side surrounded by the sealant 905 is a space 907.
[149] In addition, 908 is a wiring for transmitting signals input to the source signal line driver circuit 901 and the gate signal line driver circuit 903, and the video signal from the FPC (flexible printed circuit; terminal portion) 909 serving as an external input terminal. Receive a clock signal. Although only the FPC (terminal portion) is shown here, this FPC (terminal portion) may be equipped with a printed wiring board (PWB). The light emitting device of the present specification includes not only a light emitting device body but also a state in which an FPC or a PWB is mounted therein.
[150] Next, a cross-sectional structure is demonstrated using FIG. 8 (B). A driving circuit and a pixel portion are formed on the substrate 901, where the source signal line driving circuit 901 and the pixel portion 902 are shown as driving circuits.
[151] As the source signal line driver circuit 901, a CMOS circuit in which the n-channel TFT 923 and the p-channel TFT 924 are combined is formed. Further, the TFT forming the driving circuit may be formed of a known CMOS circuit, PMOS circuit or NMOS circuit. In addition, although this embodiment shows the driver integrated light-emitting device which formed the drive circuit on the board | substrate, it does not necessarily need to be formed and can also be formed in the outside not on a board | substrate.
[152] The pixel portion 902 also includes a plurality of pixels including a switching TFT 911, a current control TFT 912, and a first electrode (anode) 913 electrically connected to the drain of the current control TFT 912. Is formed by.
[153] In addition, an insulating layer 914 is formed at both ends of the first electrode (anode) 913, and an organic compound layer 915 is formed on the first electrode (anode) 913. On the organic compound layer 915, a second electrode (cathode) 916 having the same pattern shape and corresponding cross section is formed. Thereby, the light emitting element 918 which consists of the 1st electrode (anode) 913, the organic compound layer 915, and the 2nd electrode (cathode) 916 is formed. Since the light emitting element 918 is an example of white light emission, a color filter (not shown here for the sake of brevity) consisting of the colored layer and the BM is provided on the substrate 910.
[154] In this case, the third electrode 917 shown in Embodiment 4 is formed to perform electrical connection between the second electrode 916 and the connection wiring 908. The third electrode 917 in contact with the second electrode 916 and the connection wiring 908 also functions as a common wiring for the telephone office and is electrically connected to the FPC (terminal portion) 909 via the connection wiring 908. It is.
[155] In addition, the sealing substrate 904 is attached by the sealing member 905 to seal the light emitting device 918 formed on the substrate 910. In addition, a spacer made of a resin film may be provided to secure a gap between the encapsulation substrate 904 and the light emitting element 918. An inert gas such as nitrogen is filled in the space 907 inside the sealant 905. In addition, it is preferable to use an epoxy resin as the sealing material 905. In addition, it is preferable that the sealing agent 905 is a material which does not permeate moisture or oxygen as much as possible. In addition, a material having an effect of absorbing oxygen or water may be contained in the space 907.
[156] In addition, in the present embodiment, in addition to the glass substrate or the quartz substrate, the material constituting the encapsulating substrate 904 may be formed of fiberglass-reinforced plastics (FRP), PVF (polyvinyl fluoride), mylar, polyester, or acrylic. The plastic substrate which consists of these can be used. In addition, after sealing the sealing substrate 904 using the sealing agent 905, it is also possible to seal with a sealing agent so as to cover the side surface (exposure surface).
[157] By enclosing the light emitting element in the space 907 as described above, the light emitting element can be completely blocked from the outside, and it is possible to prevent the invasion of substances that promote deterioration of organic compound layers such as moisture and oxygen from the outside. Therefore, a highly reliable light emitting device can be obtained.
[158] Moreover, an example of the manufacturing process of the said structure is shown to FIG. 7 (A)-FIG. 7 (C).
[159] FIG. 7A is a cross-sectional view at the step of selectively forming a second electrode (cathode made of Li-Al) by a deposition plasma after formation of an organic compound film (lamination including PEDOT) by a coating method. In addition, the manufacturing method of the positive electrode which consists of a transparent conductive film, or TFT is abbreviate | omitted here for the sake of simplicity.
[160] Subsequently, FIG. 7B is a cross-sectional view in the step of etching the organic compound film (lamination including PEDOT) with plasma by self-alignment using the second electrode as a mask.
[161] Subsequently, Fig. 7C is a cross sectional view in the step of selectively forming a third electrode for connection with the connection wiring. In addition, the second electrode and the third electrode may be the same material, or the third electrode may use a material having a lower electrical resistivity than the second electrode.
[162] In this embodiment, an example is shown in which the white light emitting element and the color filter are combined (hereinafter referred to as color filter method). A method of obtaining a full color display by forming a white light emitting element below will be described with reference to Fig. 10A.
[163] The color filter method is a method of obtaining red, green and blue light emission by passing white light emission obtained by forming a light emitting element having an organic compound film exhibiting white light emission through a color filter.
[164] There are various methods for obtaining white light emission. Here, the case where a light emitting layer made of a polymer-based material which can be formed by a coating method is used will be described. In this case, the dye doping of the polymer material to be the light emitting layer can be carried out by adjusting the solution and can be obtained very easily compared to the vapor deposition method of performing the co-deposition to dope a plurality of pigments.
[165] Specifically, a poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) solution (PEDOT) serving as a hole injection layer on an anode composed of metal having a large work function (Pt, Cr, W, Ni, Zn, Sn, In). / PSS) applied to the entire surface and calcined, and then acting as a light emitting layer, the emission center pigments (1,1,4,4-tetraphenyl-1,3-butadiene (TPB), 4-dicyanomethylene-2-methyl-6 A metal having a low work function after coating and firing a polyvinylcarbazole (PVK) solution doped with-(p-dimethylamino-styryl) -4H-pyran (DCM1), Nilet, kmarin 6, etc.) A thin film containing (Li, Mg, Cs), and a transparent conductive film laminated thereon (ITO (Indium Tin Oxide Alloy), Indium Zinc Oxide Alloy (In ₂ O ₃ -ZnO), Zinc Oxide (ZnO), etc.) The negative electrode which consists of lamination | stacking with is formed. PEDOT / PSS also uses water as a solvent and is insoluble in organic solvents. Therefore, there is no fear of remelting even when PVK is applied thereon. In addition, since PEDOT / PSS and PVK have different solvents, it is preferable not to use the same thing in a film-forming chamber.
[166] In addition, although the example which laminated | stacked the organic compound layer as shown in FIG. 9 (B) was shown in the said example, an organic compound layer can also be made into a single layer as shown in FIG. For example, electron-transporting 1,3,4-oxadiazole derivatives (PBDs) may be dispersed in polytransporting polyvinylcarbazole (PVK). In addition, white light emission can be obtained by dispersing 30% by weight of PBD as an electron transporting agent and dispersing an appropriate amount of four kinds of dyes (TPB, kmarin 6, DCM1, and nile).
[167] In addition, the organic compound film is formed between the anode and the cathode, and white light emission can be obtained from the organic compound film by recombination of holes injected from the anode and electrons injected from the cathode in the organic compound film.
[168] It is also possible to obtain white light emission as a whole by appropriately selecting an organic compound film emitting red light, an organic compound film emitting green light, or an organic compound film emitting blue light and superimposing and mixing them.
[169] The organic compound film formed by the above can obtain white light emission as a whole.
[170] A colored layer (R) absorbing the rest except red light emission, a book color layer (G) absorbing the rest except green light emission, and a colored layer (B) absorbing the rest except blue light emission in the direction in which the organic compound film emits white light. By forming the color filters provided respectively, the white light emission from the light emitting element can be separated and obtained as red light emission, green light emission, and blue light emission. In the case of the active matrix light emitting device, a TFT is formed between the substrate and the color filter.
[171] In addition, as the colored layers R, G, and B, a gradient mosaic array, a triangular mosaic array, an RGBG 4-pixel array, or an RGBW 4-pixel array may be used, including the simplest stripe pattern.
[172] An example of the relationship between the transmittance and the wavelength of each colored layer is shown in FIG. 15 using the white light source D65. The colored layer which comprises a color filter is formed using the color resist which consists of organic photosensitive materials which disperse | distributed the pigment. In addition, the color reproduction range at the time of combining white light emission and a color filter is shown in FIG. 16 as chromaticity coordinates. The chromaticity coordinates of white light emission are (x, y) = (0.34, 0.35). It can be seen from FIG. 16 that color reproducibility as a color filter is sufficiently secured.
[173] In this case, even if the obtained white light is different from each other, it is formed of an organic compound film that exhibits white light emission. Therefore, it is not necessary to apply and form the organic compound film for each of the emission colors. In addition, a circular polarizer for preventing mirror reflection is not particularly required.
[174] Next, a CCM (color changing medium) method realized by combining a blue light emitting element having a blue light emitting organic compound film and a fluorescent color conversion layer will be described with reference to FIG. 10B.
[175] In the CCM method, a fluorescent color conversion layer is excited in blue light emitted from a blue light emitting element, and color conversion is performed in each color conversion layer. Specifically, from blue to red in the color conversion layer (B → R), from blue to green in the color conversion layer (B → G), and from blue to blue in the color conversion layer (B → B). (The conversion from blue to blue does not need to be performed) to obtain red, green and blue light emission. Also in the CCM method, in the active matrix type light emitting device, a TFT is formed between the substrate and the color conversion layer.
[176] Also in this case, it is not necessary to separately apply and form the organic compound film. In addition, a circular polarizer for preventing mirror reflection is not particularly required.
[177] In addition, in the case of using the CCM method, since the color conversion layer is fluorescent, there is a problem of being excited by external light and lowering the contrast, so that the contrast can be increased by attaching a color filter as shown in FIG. 10 (C). Also good. 10C illustrates an example of using a white light emitting device, but a single color light emitting device may be used.
[178] As shown in Fig. 9C, white light emission can be obtained even by laminating a layer made of a polymeric material and a layer made of a low molecular material as the organic compound layer. In the case of realizing white light emission through lamination, the polymer material as the hole injection layer is formed by a coating method, followed by co-deposition by vapor deposition, and a light emitting region is doped with a dye having a light emission color different from that of the light emitting region in the hole transport layer. You may mix with the light emission color from. By suitably adjusting the material of the light emitting layer or the hole transport layer, white light emission can be obtained as a whole.
[179] In addition, the present invention in which the organic compound layer made of a polymer material is self-aligned by plasma using an electrode as a mask is not limited to white light emission, but can be applied to colored light emitting devices using at least one polymer material as an organic compound layer. .
[180] 11A to 11D show an example of the stacked structure of the light emitting elements.
[181] The laminated structure shown in Fig. 11A is an organic compound layer 702 which is a laminate of a first organic compound layer 702a made of a polymer material and a second organic compound layer 702b made of a low molecular material material on the anode 701. And the cathode buffer layer 703 and the cathode 704 are formed. By suitably setting the material and the film thickness of these layers interposed between the cathode and the anode, red, green, and blue light emitting elements can be obtained.
[182] In the case of obtaining a red light-emitting device, as shown in Fig. 11B, PEDOT / PSS, which is a polymer material, is coated on a positive electrode made of ITO by spin coating and vacuum-fired to have a film thickness of 30 nm. Subsequently, a 4,4'-bis [N- (1-naphthyl) -N-phenyl-amino] -biphenyl (hereinafter referred to as' -NPD) film is formed to a film thickness of 60 nm by vapor deposition. Subsequently, a tris (8-kinolinolito) aluminum (hereinafter referred to as Alq ₃ ) film containing DCM as a dopant is formed to a film thickness of 40 nm by vapor deposition. Subsequently, an Alq ₃ film is formed with a film thickness of 40 nm. Subsequently, a CaF ₂ film is formed to a film thickness of 1 nm by evaporation, and finally, an Al film is formed to a film thickness of 200 nm by sputtering or evaporation to complete a red light emitting device.
[183] In order to obtain a green light emitting device, as shown in Fig. 11C, PEDOT / PSS, which is a polymer material, is coated on a positive electrode made of ITO by spin coating and vacuum-fired to have a film thickness of 30 nm. Subsequently, a film thickness of 60 nm is formed by evaporation of the -NPD film. Subsequently, an Alq ₃ film containing DMQD as a dopant is formed to a film thickness of 40 nm by vapor deposition. Subsequently, an Alq ₃ film is formed with a film thickness of 40 nm. Subsequently, a CaF ₂ film is formed to a thickness of 1 nm by evaporation, and finally, an Al film is formed to be 200 nm in thickness by sputtering or evaporation to complete a green light emitting device.
[184] In the case of obtaining a blue light emitting device, as shown in Fig. 11D, PEDOT / PSS, which is a polymer material, is coated on a positive electrode made of ITO by spin coating and vacuum-fired to obtain a film thickness of 30 nm. Subsequently, a film thickness of 60 nm is formed by evaporation of the -NPD film. Subsequently, a vasocuproin (hereinafter referred to as BCP) film as a dopant is formed to a film thickness of 10 nm by vapor deposition. Subsequently, an Alq ₃ film is formed with a film thickness of 40 nm. Subsequently, a CaF ₂ film is formed to a thickness of 1 nm by a vapor deposition method, and finally, an Al film is formed to a thickness of 200 nm by a sputtering method or a vapor deposition method to complete a blue light emitting device.
[185] In the case of forming the colored light emitting devices R, G, and B, it is not necessary to provide a color filter, but may be provided to increase the color purity.
[186] In addition, this example can be freely combined with any of the first to fourth embodiments.
[187] Example 2
[188] In this embodiment, Fig. 12 shows an example of a multichamber-type manufacturing apparatus that automates the production of light emitting elements from production to encapsulation.
[189] In Fig. 12, the manufacturing apparatus includes gates 100a to 100k, 100m to 100w, charging chamber 101, drawout chamber 119, transfer chambers 102, 104a, 108, 114, 118, transfer chamber 105, and the like. 107, 111, film formation chambers 106R, 106B, 106G, 106H, 106E, 109, 110, 112, 113, pretreatment chamber 103, sealing substrate load chamber 117, dispenser chamber 115, sealing chamber ( 116, cassette chambers 120a and 120b, tray mounting stage 121, and etching chamber 122 by plasma.
[190] First of all, the anode (first electrode) and anode comprising a plurality of TFTs, a transparent conductive film (ITO (indium tin oxide alloy), indium zinc oxide alloy (In ₂ O ₃ -ZnO), zinc oxide (ZnO), etc.) On the substrate provided with an insulating film covering both ends, a poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) solution (PEDOT / PSS) serving as a hole injection layer is formed on the entire surface, and heat treatment is performed under vacuum to vaporize moisture. Let's do it. If the surface of the anode needs to be cleaned or polished, this may be done before forming the organic compound layer containing PEDOT.
[191] Hereinafter, a process of forming a laminated structure shown in FIG. 9B by importing a substrate having a TFT, an anode, an insulating film covering the ends of the anode, and a hole injection layer (including PEDOT) into the manufacturing apparatus shown in FIG. Indicates.
[192] First, the substrate is set in the cassette chamber 120a or the cassette chamber 120b. If the substrate is a large substrate (e.g. 300 mm x 360 mm), it is placed in the cassette chamber 120b, and if it is a normal substrate (e.g. 127 mm x 127 mm), it is transferred to the tray mounting stage 121 Several board | substrates are mounted in a tray (for example, 300 mm x 360 mm).
[193] Subsequently, the cassette chamber 120b is transferred to a transfer chamber 118 provided with a substrate transfer mechanism. Subsequently, the substrate is transferred to the deposition chamber 112 to form an organic compound layer made of a polymer, which becomes a light emitting layer, on the entire surface of the hole injection layer (including PEDOT) provided on the entire surface. The deposition chamber 112 is a deposition chamber for forming an organic compound layer made of a polymer. In this embodiment, a dye (1,1,4,4, -tetraphenyl-1,3-butadiene (TPB), 4-dicyanomethylene-2-methyl-6- (p-dimethylamino-sty) serving as a light emitting layer An example in which a polyvinylcarbazole (PVK) solution doped with reel) -4H-pyran (DCM1), nile red, xmarin 6, and the like) is formed on the entire surface thereof. When the organic compound layer is formed by the spin coating method in the film formation chamber 112, the film formation surface of the substrate is set upward under atmospheric pressure. In addition, after performing film formation using water or an organic solvent as a solvent, heat treatment in a vacuum is preferably performed to vaporize the water, and a vacuum-annealable chamber connected to the film formation chamber 112 may be provided.
[194] Subsequently, the transfer chamber 118 is provided to the charging chamber 101 from the transfer chamber 118 provided with the substrate transfer mechanism.
[195] The charging chamber 101 is connected to the vacuum exhaust treatment chamber, and after evacuating, it is preferable to introduce an inert gas to atmospheric pressure. Subsequently, the substrate is transferred to the transfer chamber 102 connected to the charging chamber 101. The vacuum is evacuated to maintain the vacuum so that water or oxygen is not present in the transfer chamber as much as possible.
[196] In addition, the transfer chamber 102 is connected to a vacuum exhaust processing chamber for vacuuming the inside of the transfer chamber. The vacuum exhaust treatment chamber is provided with a magnetic levitation turbomolecular pump, cryopump, or dry pump. As a result, it is possible to set the attained vacuum degree of the transfer chamber to 10 ^-5 to 10 ^-6 Pa and further control the back diffusion of impurities from the pump side and the exhaust system. Inert gas such as nitrogen or rare gas is used as the gas to be introduced to prevent impurities from being introduced into the apparatus. These gases, which are introduced inside the apparatus, utilize those which have been purified by a gas purifier before they are introduced into the apparatus. Therefore, it is necessary to provide a gas purifier so that the gas is introduced into the film forming apparatus after the gas is highly purified. As a result, since oxygen, water, and other impurities contained in the gas can be removed in advance, it is possible to prevent the impurities from being introduced into the apparatus.
[197] In addition, after performing film formation using water or an organic solvent as a solvent, it is preferable to further evaporate the water by transferring the substrate to the pretreatment chamber 103 and performing heat treatment under high vacuum.
[198] In this embodiment, an example in which an organic compound layer made of a polymer material is laminated is shown, but the lamination structure with a layer made of a low molecular material material shown in Figs. 9C and 11A to 11D is given. In this case, the film formation may be performed in the deposition chambers 106R, 106G, and 106B by vapor deposition as appropriate to form an organic compound layer that exhibits white, red, green, or blue light emission as a whole. The transfer chamber 105 is provided with a substrate reversing mechanism to properly reverse the substrate.
[199] If necessary, the electron transport layer or the electron injection layer may be appropriately formed in the film formation chamber 106E, and the hole injection layer or the hole transport layer may be appropriately formed in the deposition chamber 106H. In the case of using the vapor deposition method, for example, the deposition is carried out in a deposition chamber in which the vacuum degree is 5 × 10 ⁻³ Torr (0.665 Pa) or less, preferably 10 ⁻⁴ to 10 ⁻⁶ Pa. The organic compound is vaporized by resistance heating in advance during deposition, and the shutter (not shown) is opened during deposition to scatter in the direction of the substrate. The vaporized organic compound is scattered upward and deposited on the substrate through an opening (not shown) provided in the metal mask (not shown). In addition, the temperature T ₁ of the substrate is 50 to 200 ° C, preferably 65 to 150 ° C, by means of heating the substrate during deposition. In the case of using the vapor deposition method, it is preferable to set a crucible in which the vapor deposition material is stored in advance in the deposition chamber by the material manufacturer. When setting, it is preferable to carry out so that it may not contact air | atmosphere, and after transferring from a material manufacturer, it is preferable to introduce a crucible into the film-forming chamber as it is sealed to the 2nd container. Preferably, a chamber having a vacuum exhaust means connected to the deposition chamber 106R is provided, and the crucible is taken out from the second container in a vacuum or inert gas atmosphere in the chamber, and the crucible is installed in the deposition chamber. In this way, the crucible and the EL material housed in the crucible can be prevented from contamination.
[200] Subsequently, the substrate was conveyed from the transfer chamber 102 to the transfer chamber 105, from the transfer chamber 105 to the transfer chamber 104a, and from the transfer chamber 104a to the transfer chamber 107 without being exposed to the atmosphere. The substrate is transferred from the transfer chamber 107 to the transfer chamber 108 without further exposure to the atmosphere.
[201] Subsequently, an element belonging to the metal film (MgAg, MgIn, AlLi, CaF ₂ , CaN, etc.), or an element belonging to group 1 or 2 of the periodic table is transferred to the film formation chamber 110 by a transport mechanism provided in the transport chamber 180. And a cathode (second electrode) made of a film formed by co-deposition and aluminum by a vapor deposition method using resistance heating. In the case of deposition, it is selectively formed using a deposition mask.
[202] Subsequently, the substrate is transferred to the plasma processing chamber 122 by a transfer mechanism provided in the transfer chamber 108, and the lamination of the organic compound film made of a polymer material is self-aligned with the second electrode as a mask. The plasma processing chamber 122 has a plasma generating means and performs dry etching by exciting one or a plurality of gases selected from the group consisting of Ar, H, F or O to generate plasma. In the case of etching by oxygen plasma treatment, the pretreatment chamber 103 can also be implemented.
[203] Subsequently, the substrate is transferred back to the film formation chamber 110, and formed of a metal film (an alloy of MgAg, MgIn, AlLi, CaN, or the like, or a film formed by co-evaporation of aluminum and elements belonging to Groups 1 or 2 of the periodic table). The third electrode (corresponding to the upper layer of the cathode) is formed by vapor deposition using resistance heating. In this example, the second electrode and the third electrode are formed by forming the third electrode in the same deposition chamber 110 using a mask different from the deposition mask of the metal film which has been deposited first. Falls. Therefore, in order to improve a mask, it is preferable to provide a film-forming chamber separately. In addition, in the present embodiment, although the example of selectively forming the third electrode is formed by the deposition mask, the metal film may be formed by the sputtering method, and then the etching may be performed by using a photoresist.
[204] In the above process, the light emitting device having the vapor deposition structure shown in Fig. 9B is formed.
[205] Subsequently, the light emitting element is transferred from the transfer chamber 108 to the film formation chamber 113 without being brought into contact with the atmosphere to form a protective film made of a silicon nitride film or a silicon nitride oxide film. Here, the sputtering apparatus provided with the target which consists of silicon, the target which consists of silicon oxide, or the target which consists of silicon nitride is provided in the film-forming chamber 113 here. For example, a silicon nitride film can be formed by using a target made of silicon as the atmosphere of a film forming chamber with a nitrogen atmosphere or an atmosphere containing nitrogen and argon.
[206] Subsequently, the substrate on which the light emitting element is formed is transferred from the transfer chamber 108 to the transfer chamber 111 without being brought into contact with the atmosphere, and from the transfer chamber 111 to the transfer chamber 114.
[207] Subsequently, the substrate on which the light emitting element is formed is transferred from the transfer chamber 114 to the encapsulation chamber 116. Moreover, it is preferable to provide the sealing board | substrate with the sealing material in the sealing chamber 116.
[208] The sealing substrate is set in the sealing substrate load chamber 117 from the outside. In addition, in order to remove impurities such as moisture, it is preferable to perform annealing in advance in vacuum, for example, in the sealing substrate load chamber 117. When the sealing material is formed on the sealing substrate, the transfer chamber 114 is brought to atmospheric pressure, and then the sealing substrate is transferred from the sealing substrate load chamber to the dispenser chamber 115 to form a sealing material for attaching to the substrate provided with the light emitting element, and the sealing material The encapsulation substrate on which is formed is transferred to the encapsulation chamber 116.
[209] Subsequently, annealing is performed in a vacuum or inert atmosphere to degas the substrate on which the light emitting device is provided, and then the encapsulation substrate provided with the sealing material and the substrate on which the light emitting device are formed are attached. In addition, the enclosed space is filled with hydrogen or an inert gas. In addition, although the example which formed the sealing material in the sealing substrate was shown here, it is not specifically limited to this, You may form a sealing material in the board | substrate with which the light emitting element was formed.
[210] Next, the pair of substrates attached are irradiated with UV light by an ultraviolet irradiation mechanism provided in the sealing chamber 116 to cure the seal member. In addition, although ultraviolet curing resin was used as a sealing material here, if it is an adhesive material, there will be no limitation in particular.
[211] Subsequently, the pair of substrates attached are transferred from the sealing chamber 116 to the transfer chamber 114 and the transfer chamber 114 from the transfer chamber 114 to the withdrawal chamber 119.
[212] By using the manufacturing apparatus shown in FIG. 12 as described above, the light emitting device can not be exposed to the outside until it is completely enclosed in the sealed space, thereby making it possible to manufacture a reliable light emitting device. In addition, the transfer chamber 114 repeats the nitrogen atmosphere at vacuum and atmospheric pressure, but the transfer chambers 102, 104a, and 108 are preferably kept in vacuum at all times.
[213] In addition, it is also possible to set it as an in-line film-forming apparatus.
[214] In addition, the substrate was brought into the manufacturing apparatus shown in Fig. 12, and a metal film (metal having a large work function (Pt, Cr, W, Ni, Zn, Sn, In, etc.) was used as the anode, and the light emission direction of the laminated structure A process of forming a light emitting device having a light emitting direction in the reverse direction will be described below.
[215] First, a poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) solution (PEDOT / PSS) serving as a hole injection layer is formed on a substrate on which a plurality of TFTs, an anode, and an insulating film covering the ends of the anode are provided, and then in a vacuum. Heat treatment is performed to vaporize the moisture.
[216] Subsequently, a substrate on which a TFT and an anode are provided is set in the cassette chamber 120a or the cassette chamber 120b.
[217] Subsequently, the substrate is transferred from the cassette chamber 120a or the cassette chamber 120b to the transfer chamber 118 provided with the substrate transfer mechanism.
[218] Subsequently, the substrate is transferred to the deposition chamber 112 to form an organic compound layer made of a polymer, which becomes a light emitting layer, on the entire surface of the hole injection layer (including PEDOT) provided on the entire surface. The deposition chamber 112 is a deposition chamber for forming an organic compound layer made of a polymer. In this embodiment, a dye (1,1,4,4, -tetraphenyl-1,3-butadiene (TPB), 4-dicyanomethylene-2-methyl-6- (p-dimethylamino-sty) serving as a light emitting layer An example in which a polyvinylcarbazole (PVK) solution doped with reel) -4H-pyran (DCM1), nile red, xmarin 6, and the like) is formed on the entire surface thereof. When the organic compound layer is formed by the spin coating method in the film formation chamber 112, the film formation surface of the substrate is set upward under atmospheric pressure.
[219] Subsequently, the substrate is transferred from the transfer chamber 118 provided with the substrate transfer mechanism to the charging chamber 101. Subsequently, the substrate is transferred to the transfer chamber 102 connected to the charging chamber 101. In addition, after performing film formation using water or an organic solvent as a solvent, it is preferable to transfer the substrate to the pretreatment chamber 103 and heat it therein to evaporate moisture.
[220] Subsequently, the substrate was transferred from the transfer chamber 102 to the transfer chamber 105, from the transfer chamber 105 to the transfer chamber 104a, and from the transfer chamber 104a to the transfer chamber 107 without bringing the substrate into contact with the atmosphere. After that, the transfer chamber 107 is transferred from the transfer chamber 107 to the transfer chamber 108 without continuing to contact the atmosphere.
[221] Subsequently, the substrate is transferred to the deposition chamber 110 by a transfer mechanism provided in the transfer chamber 180 to belong to a very thin metal film (alloy such as MgAg, MgIn, AlLi, CaN, or group 1 or 2 of the periodic table). A cathode (lower layer) composed of an element and a film formed of aluminum by co-deposition is formed by vapor deposition using resistance heating. After forming a metal (lower layer) made of a thin metal layer, the film is transferred to the deposition chamber 109 to form a transparent conductive film (ITO (Indium Tin Oxide Alloy) and Indium Zinc Oxide Alloy (In ₂ O ₃ -ZnO) by the sputtering method. And a cathode (upper layer) made of zinc oxide (ZnO) and the like, and a cathode (second electrode) composed of a lamination of a thin metal layer and a transparent conductive film is appropriately formed using a metal mask or the like.
[222] Subsequently, the substrate is transferred to the plasma processing chamber 122 by a transfer mechanism provided in the transfer chamber 108, and the lamination of the organic compound film made of the polymer material is self-aligned with the second electrode as a mask. The plasma processing chamber 122 has a plasma generating means and performs dry etching by exciting one or a plurality of gases selected from the group consisting of Ar, H, F or O to generate plasma. In the case of etching by oxygen plasma treatment, the pretreatment chamber 103 can also be implemented.
[223] Subsequently, the substrate is again transferred to the film formation chamber 109 to form a third electrode (corresponding to an upper layer of the cathode) made of a transparent conductive film by the sputtering method. In this case, the metal mask is replaced with the second electrode pattern formed earlier, and the third electrode is formed to electrically connect the second electrode to the connection wiring. In addition, in the present embodiment, an example in which the third electrode is selectively formed using a mask is illustrated, but it is also possible to pattern the third electrode by performing etching using a photoresist.
[224] In the above process, the light emitting element for extracting light through the second electrode is formed.
[225] In addition, since the following processes are the same as the manufacturing process of the light emitting device which has a laminated structure shown in FIG. 9 (B) mentioned above, description is abbreviate | omitted here.
[226] In addition, although the example using the method described in Embodiment 4, in which the third electrode is electrically connected to the connection wiring by forming the third electrode, is shown, the present invention is not particularly limited and is described in any of Embodiments 1 to 3. It is also possible to perform electrical connection of a 2nd electrode and connection wiring by the said method.
[227] In addition, this embodiment can be freely combined with the first embodiment.
[228] Example 3
[229] By implementing the present invention, all electronic devices equipped with a module (active matrix EL module) having an organic light emitting element are completed.
[230] Such electronic devices include video cameras, digital cameras, head mounted displays (goggle displays), car navigation systems, projectors, car stereos, personal computers, mobile information terminals (mobile computers, mobile phones or electronic books, etc.). Examples thereof are shown in Figs. 13A to 13F and 14A to 14C.
[231] FIG. 13A shows a personal computer, which includes a main body 2001, an image input portion 2002, a display portion 2003, a keyboard 2004, and the like.
[232] FIG. 13B shows a video camera including a main body 2101, a display portion 2102, an audio input portion 2103, an operation switch 2104, a battery 2105, an image receiving portion 2106, and the like.
[233] FIG. 13C shows a mobile computer, which includes a main body 2201, a camera portion 2202, an image receiving portion 2203, an operation switch 2204, a display portion 2205, and the like.
[234] FIG. 13D illustrates a goggle display, which includes a main body 2301, a display portion 2302, and an arm portion 2303.
[235] Fig. 13E shows a player using a recording medium on which a program is recorded (hereinafter referred to as a recording medium), which includes a main body 2401, a display portion 2402, a speaker portion 2403, a recording medium 2404, and an operation switch 2405. And the like. In addition, the player may use a DVD (Digital Versitile Disc), a CD, or the like as a recording medium to perform music, movie, game or the Internet.
[236] Fig. 13F shows a digital camera, which includes a main body 2501, a display portion 2502, an eyepiece portion 2503, an operation switch 2504, an image receiving portion (not shown), and the like.
[237] Fig. 14A shows a mobile telephone, which includes a main body 2901, an audio output unit 2902, an audio input unit 2907, a display unit 2904, an operation switch 2905, an antenna 2906, an image input unit (CCD, and an image). Sensor, etc.) 2907, and the like.
[238] Fig. 14B is a portable book (electronic book), which includes a main body 3001, display portions 3002 and 3003, a storage medium 3004, an operation switch 3005, an antenna 3006, and the like.
[239] Fig. 14C shows a main body 3101, a support 3102, a display portion 3103, and the like as a display.
[240] Incidentally, the display shown in Fig. 14C is small or medium or large, for example, an image size of 5 to 20 inches. In addition, in order to form the display part of such a size, it is preferable to mass-produce by using a multi-pattern which uses one side of a board | substrate with 1m.
[241] As described above, the scope of application of the present invention is very wide and can be applied to the manufacturing method of electronic devices in all fields. In addition, the electronic device of the present embodiment can be realized through any combination of the first to fourth embodiments, the first embodiment, and the second embodiment.
[242] Example 4
[243] In the fourth embodiment, examples of the insulating film having the first and the second radius of curvature are shown, but in this embodiment, examples of the curvature radius only at the upper end of the insulating film are shown in Figs. 19A to 19C.
[244] In the present embodiment, the configuration other than the insulator is the same as that of the fourth embodiment, but is not particularly limited, and the insulating film described in this embodiment can be applied instead of the insulating films shown in the first to third embodiments.
[245] 19A to 19C, the light emitting device includes the organic compound layer 80, the second electrode 81, the connection wiring 87, the insulator 88, the first electrode 89, and the third electrode ( 91) and a light emitting element 93. As the insulating film 88, it is preferable to use a negative organic material that is insoluble in the etchant by light or a positive organic material that is soluble in the etchant by light.
[246] In this embodiment, the insulator 88 is formed using a positive photoresist. The insulating film 88 shown in Fig. 19A is formed by adjusting exposure conditions, etchant conditions, and the like. The insulating film 88 has a curvature radius of 0.2 µm to 3 µm only at the upper end portion. The insulating film 88 can improve the coverage of the organic compound layer 80 or the second electrode 81 made of a metal film, and can also reduce a defect called shrink which reduces the light emitting area. FIG. 20 is a photograph showing the same shape as that of the insulating film 88 shown in FIG. 19A using a positive acrylic resin on an organic substrate and observed in cross section. In addition, the taper angle at the side surface of the insulating film 88 may be set to 45 ° ± 10 °.
[247] 19B shows an example in which an upper layer 98b made of a photoresist as a photosensitive organic material and a lower layer 98a made of acryl as a non-photosensitive organic material are laminated as an insulating film. The upper end portion 98b of the insulating film has a curvature radius of 0.2 µm to 3 µm only at the upper end portion. As the lower layer 98a of the insulating film, an inorganic material (silicon oxide, silicon nitride, silicon oxynitride, etc.) can be used in place of the non-photosensitive material.
[248] 19C is an example in which the silicon nitride film 94 is formed on the insulating film 88 by the RF sputtering method. Instead of the silicon nitride film 94, a silicon nitride oxide film or a film represented by AlN _X O _Y may be used. The film represented by AlN _X O _Y may be formed by introducing oxygen, nitrogen or a rare gas from the gas introduction system by a sputtering method using a target made of AlN or Al. The content of nitrogen in the layer represented by AlN _X O _Y may be in the range of several atomic% or more, preferably 2.5 atomic% to 47.5 atomic%, and oxygen of 47.5 atomic% or less, preferably 0.01 to 20 atomic%. By forming a protective film such as a silicon nitride film on the insulating film 88, a defect called shrink is reduced in which the light emitting area is reduced.
[249] In addition, the present embodiment may be any combination of Embodiments 1 to 4 and Examples 1 to 3.
[250] By enabling the selective formation of the polymer material layer according to the present invention, it is possible to easily form a structure in which the organic compound layer is not formed in the connection portion of the wiring connected to the external power source.
[251] In addition, the present invention provides a color filter, which eliminates the need for a circular polarizer, thereby reducing the cost and eliminating the need for separate coating, thereby improving the yield and improving the definition.

权利要求:
Claims (52)
[1" claim-type="Currently amended] A light emitting element having a first electrode, a layer containing an organic compound on the first electrode, and a layered second electrode containing this organic compound, between the first substrate having an insulating surface and the second substrate having light transmission properties. A light emitting device comprising a pixel portion having a plurality of, a driving circuit, and a terminal portion,
The terminal portion is disposed on the first substrate to be located outside the second substrate,
The first substrate and the second substrate are attached by an adhesive in which conductive fine particles having different particle diameters are mixed, and the wirings from the second electrode and the terminal portion are electrically connected.
[2" claim-type="Currently amended] The light emitting device of claim 1, wherein the second electrode is an anode or a cathode of one of the light emitting devices.
[3" claim-type="Currently amended] The light emitting device of claim 1, wherein the second electrode has the same pattern as the layer including the organic compound.
[4" claim-type="Currently amended] The light emitting device of claim 1, wherein the organic compound is a polymer material.
[5" claim-type="Currently amended] The light emitting device of claim 1, wherein the layer including the organic compound comprises a layer made of a polymer material and a layer made of a low molecular material.
[6" claim-type="Currently amended] The method of claim 1, wherein the end of the first electrode is covered with an insulating film, the upper end of the insulating film has a curved surface having a first radius of curvature, the lower end of the insulator has a curved surface having a second radius of curvature, And a first radius of curvature and a second radius of curvature are 0.2 μm to 3 μm.
[7" claim-type="Currently amended] The light emitting device according to claim 1, wherein the first electrode is made of a light transmitting material and is an anode or a cathode of one of the light emitting devices.
[8" claim-type="Currently amended] The light emitting device of claim 1, wherein the light emitting device emits white light and is combined with color filters.
[9" claim-type="Currently amended] The light emitting device of claim 1, wherein the light emitting device emits a single color and is combined with a color conversion layer or a coloring layer.
[10" claim-type="Currently amended] The light emitting device of claim 1, wherein the light emitting device is any one of a video camera, a digital camera, a goggle display, a car navigation system, a personal computer, and a portable information terminal.
[11" claim-type="Currently amended] A light emitting element having a first electrode, a layer containing an organic compound on the first electrode, and a layered second electrode containing this organic compound, between the first substrate having an insulating surface and the second substrate having light transmission properties. A light emitting device comprising a pixel portion having a plurality of, a driving circuit, and a terminal portion,
The terminal portion is disposed on the first substrate to be located outside the second substrate,
The said 1st board | substrate and the said 2nd board | substrate are affixed by the adhesive agent which mixed the microparticles | fine-particles of an inorganic material, and electroconductive microparticles with a larger particle size than this microparticle, and the wiring from the said 2nd electrode and a terminal part is electrically connected Light emitting device.
[12" claim-type="Currently amended] The light emitting device of claim 11, wherein the second electrode is an anode or a cathode of one of the light emitting devices.
[13" claim-type="Currently amended] 12. The light emitting device according to claim 11, wherein the second electrode has the same pattern as the layer containing the organic compound.
[14" claim-type="Currently amended] The light emitting device of claim 11, wherein the organic compound is a polymer material.
[15" claim-type="Currently amended] The light emitting device of claim 11, wherein the layer including the organic compound comprises a layer made of a polymer material and a layer made of a low molecular material.
[16" claim-type="Currently amended] The method of claim 11, wherein the end of the first electrode is covered with an insulating film, the upper end of the insulating film has a curved surface having a first radius of curvature, the lower end of the insulator has a curved surface having a second radius of curvature, And a first radius of curvature and a second radius of curvature are 0.2 μm to 3 μm.
[17" claim-type="Currently amended] 12. The light emitting device according to claim 11, wherein the first electrode is made of a light transmitting material and is an anode or a cathode of one of the light emitting elements.
[18" claim-type="Currently amended] The light emitting device of claim 11, wherein the light emitting device emits white light and is combined with color filters.
[19" claim-type="Currently amended] The light emitting device of claim 11, wherein the light emitting device emits a single color and is combined with a color conversion layer or a coloring layer.
[20" claim-type="Currently amended] The light emitting device of claim 11, wherein the light emitting device is any one of a video camera, a digital camera, a goggle display, a car navigation system, a personal computer, and a portable information terminal.
[21" claim-type="Currently amended] A light emitting device comprising: a pixel portion having a plurality of light emitting elements having a first electrode, a layer comprising an organic compound on the first electrode, a layered second electrode comprising the organic compound, and a terminal portion,
A cross section of the layer including the organic compound and a cross section of the second electrode are coincident with each other,
And a portion in which the wires extending from the second electrode and the terminal portion are electrically connected by an adhesive including conductive particles, between the terminal portion and the pixel portion.
[22" claim-type="Currently amended] 22. The light emitting device of claim 21, wherein the second electrode is an anode or a cathode of one of the light emitting devices.
[23" claim-type="Currently amended] 22. The light emitting device of claim 21, wherein the organic compound is a polymer material.
[24" claim-type="Currently amended] 22. The light emitting device of claim 21, wherein the layer including the organic compound comprises a layer made of a polymer material and a layer made of a low molecular material.
[25" claim-type="Currently amended] 22. The method of claim 21, wherein an end of the first electrode is covered with an insulating film, an upper end of the insulating film has a curved surface having a first radius of curvature, and a lower end of the insulating material has a curved surface having a second radius of curvature. And a first radius of curvature and a second radius of curvature are 0.2 μm to 3 μm.
[26" claim-type="Currently amended] 22. The light emitting device according to claim 21, wherein the first electrode is made of a light transmitting material and is an anode or a cathode of one of the light emitting elements.
[27" claim-type="Currently amended] The light emitting device of claim 21, wherein the light emitting device emits white light and is combined with color filters.
[28" claim-type="Currently amended] The light emitting device of claim 21, wherein the light emitting device emits a single color and is combined with a color conversion layer or a coloring layer.
[29" claim-type="Currently amended] The light emitting device of claim 21, wherein the light emitting device is any one of a video camera, a digital camera, a goggle display, a car navigation system, a personal computer, and a portable information terminal.
[30" claim-type="Currently amended] A light emitting device comprising: a pixel portion having a plurality of light emitting elements having a first electrode, a layer comprising an organic compound on the first electrode, a layered second electrode comprising the organic compound, and a terminal portion,
A cross section of the layer including the organic compound and a cross section of the second electrode are coincident with each other,
And between the terminal portion and the pixel portion a portion in which wiring extending from the second electrode and the terminal portion is connected to a third electrode covering the second electrode.
[31" claim-type="Currently amended] 32. The light emitting device of claim 30, wherein the third electrode is made of a metal material.
[32" claim-type="Currently amended] The light emitting device of claim 30, wherein the second electrode and the third electrode are an anode or a cathode of one of the light emitting devices.
[33" claim-type="Currently amended] The light emitting device according to claim 30, wherein the organic compound is a polymer material.
[34" claim-type="Currently amended] The light emitting device of claim 30, wherein the layer including the organic compound includes a layer made of a polymer material and a layer made of a low molecular material.
[35" claim-type="Currently amended] 31. The method of claim 30, wherein an end of the first electrode is covered with an insulating film, an upper end of the insulating film has a curved surface having a first radius of curvature, and a lower end of the insulating material has a curved surface having a second radius of curvature. And a first radius of curvature and a second radius of curvature are 0.2 μm to 3 μm.
[36" claim-type="Currently amended] 31. The light emitting device according to claim 30, wherein the first electrode is made of a light transmitting material and is an anode or a cathode of one of the light emitting elements.
[37" claim-type="Currently amended] 31. The light emitting device according to claim 30, wherein the light emitting element emits white light and is combined with color filters.
[38" claim-type="Currently amended] 31. The light emitting device according to claim 30, wherein the light emitting element emits a single color and is combined with a color conversion layer or a coloring layer.
[39" claim-type="Currently amended] The light emitting device according to claim 30, wherein the light emitting device is any one of a video camera, a digital camera, a goggle display, a car navigation system, a personal computer, and a portable information terminal.
[40" claim-type="Currently amended] In the manufacturing method of the light-emitting device containing the light emitting element which has an anode, the layer containing this organic compound on this anode, and the layered cathode containing this organic compound,
Forming a light-transmitting first electrode,
Forming a layer containing the organic compound on the first electrode by a coating method;
Selectively forming a second electrode made of a metal material by a deposition method of heating the deposition material on the layer including the organic compound;
Self-aligningly etching the layer containing the organic compound by etching with plasma using the second electrode as a mask;
And selectively forming a third electrode made of a metal material covering the second electrode.
[41" claim-type="Currently amended] 41. The method of claim 40, wherein the second electrode and the third electrode are an anode or a cathode of the light emitting element.
[42" claim-type="Currently amended] 41. The method of manufacturing a light emitting device according to claim 40, wherein the third electrode is formed using any one of a vapor deposition method and a sputtering method.
[43" claim-type="Currently amended] 41. The method of manufacturing a light emitting device according to claim 40, wherein the plasma is generated by exciting one or a plurality of gases selected from the group consisting of Ar, H, F, and O.
[44" claim-type="Currently amended] 41. The method of manufacturing a light emitting device according to claim 40, wherein said first electrode is an anode or a cathode of said light emitting element electrically connected to a TFT.
[45" claim-type="Currently amended] In the manufacturing method of the light emitting element containing the light emitting element which has an anode, the layer containing this organic compound on this anode, and the layered cathode containing this organic compound,
Forming a light-transmitting first electrode,
Forming a film comprising an organic compound made of a polymeric material on the first electrode by coating;
Selectively forming a second electrode made of a metal material by a deposition method of heating a deposition material on a film containing the organic compound,
Self-aligningly etching a film containing the organic compound by etching with plasma using the second electrode as a mask;
And a step of connecting the second electrode and the wiring extending from the terminal portion with an adhesive containing conductive particles.
[46" claim-type="Currently amended] 46. The method of claim 45, wherein the second electrode is an anode or a cathode of the light emitting device.
[47" claim-type="Currently amended] 46. The method of manufacturing a light emitting device according to claim 45, wherein the plasma is generated by exciting one or a plurality of gases selected from the group consisting of Ar, H, F, and O.
[48" claim-type="Currently amended] 46. The method of manufacturing a light emitting device according to claim 45, wherein said first electrode is an anode or a cathode of said light emitting element electrically connected to a TFT.
[49" claim-type="Currently amended] In the manufacturing method of the light emitting element containing the light emitting element which has an anode, the layer containing this organic compound on this anode, and the layered cathode containing this organic compound,
Forming a thin film transistor on the first substrate,
Forming a first electrode connected to the thin film transistor;
Forming a film comprising an organic compound made of a polymeric material on the first electrode by coating;
Selectively forming a second electrode made of a metal material by a deposition method of heating a deposition material on a film containing the organic compound,
Self-aligningly etching a film containing the organic compound by etching with plasma using the second electrode as a mask;
And connecting the second electrode and the wiring extending from the terminal portion with an adhesive containing conductive particles, and attaching the first substrate and the second substrate.
[50" claim-type="Currently amended] 50. The method of claim 49, wherein the second electrode is an anode or a cathode of the light emitting device.
[51" claim-type="Currently amended] 50. The method of manufacturing a light emitting device according to claim 49, wherein the plasma is generated by exciting one or more kinds of gases selected from the group consisting of Ar, H, F, and O.
[52" claim-type="Currently amended] The method of manufacturing a light emitting device according to claim 49, wherein said first electrode is an anode or a cathode of said light emitting element electrically connected to a TFT.

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公开号 | 公开日 | 专利标题

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同族专利:

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公开号 | 公开日

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US7190335B2|2007-03-13|

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US7629018B2|2009-12-08|

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CN1449229A|2003-10-15|

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TW200404329A|2004-03-16|

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TW200803008A|2008-01-01|

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US20070160746A1|2007-07-12|

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TWI362128B|2012-04-11|

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CN101673756A|2010-03-17|

---

US20030184217A1|2003-10-02|

---

KR100941129B1|2010-02-09|

---

TWI289870B|2007-11-11|

---

CN100525560C|2009-08-05|

---

CN101673756B|2013-08-21|

引用文献:

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公开号 | 申请日 | 公开日 | 申请人 | 专利标题

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法律状态:
2002-03-26|Priority to JPJP-P-2002-00087221

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2002-03-26|Priority to JP2002087221

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2003-03-25|Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼

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2003-10-01|Publication of KR20030077430A

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2010-02-09|Application granted

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2010-02-09|Publication of KR100941129B1

优先权:

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申请号 | 申请日 | 专利标题

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JPJP-P-2002-00087221|2002-03-26|

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JP2002087221|2002-03-26|